Technologiniai įrenginiai instituto laboratorijose.

Research Infrastructure and Services

The Institute has modern technological and analytical facilities for micro- and nanotechnology experiments, as well as for studies of the atomic and chemical structure of materials and structures

Analytical equipment

Mixtures, phases, structures

$Analytical equipment X-ray diffractometer "D8 Discover"$	X-ray diffractometer D8 Discover (Bruker AXS, Germany) is used for crystallographic structure analysis of thin films, epitaxial layers, multi-layered structures, synthesized materials or nanopowders. Using the device, it is also possible to determine the thickness of crystalline and amorphous films, do analysis of texture of polycrystalline materials and residual stress of thin films. Specifications: 2.2 kW X-ray tube with Cu anode; parallel beam/Bragg-Brentano geometry; 2xGe(022) crystal monochromator; Goebel mirror (high precision multi-layered crystal monochromator for direct Cu Kα radiation), rotor absorber, spot scintillation detector; 1D LynxEye detector; laser calibrating optics; Euler (X, Y, Z, PSI, PHI) sample holder; CHI and XI automated precision table; reflectometry addition; motorised gap addition; PATHFINDER optics (motorised switch between high resolution and path of high intensity X-ray). Data processing and analysis is carried out using DIFFRAC.SUITE (Bruker AXS) bundle software EVA, LEPTOS, TOPAS and MULTEX. Requirements for samples: ≥ 100 mg powder or ≥ 10 mm × 10 mm substrate; film thickness: 5–1000 nm.
	Fourier transform infrared spectrometer VERTEX 70 (Bruker AXS, Germany) Spectral range: 400–4000 cm-1, resolution: 1 cm-1. Measuring modes: transmission, 30o reflection, diffuse reflection, total internal reflection.
	Ultraviolet, visible and near infrared light range optical fibre spectrometer AvaSpec-2048 Spectrometer is created on AvaBench-75 symmetric Czerny-Turner construction base with 2048 pixels CCD detector. It is used to measure intensity of ultraviolet, visible and near infrared light. AvaSpec-2048 is particularly useful when illumination is weak or high resolution is needed. This spectrometer is capable to measure in 172–1100 nm range. Resolution: 1.4 nm.
	Raman scattering spectrometer inVia (Renishaw, Great Britain, 2013) The equipment is used for registration of Raman scattering spectra with con-focal micro-Raman optical system, as well as for measurement of luminescence. It can be used to investigate thin films, powders and liquid solutions. Raman spectroscopy gives information about composition of the material, but it can also be used to determine stress in some types of thin films. 532 nm wavelength, 45 mW power semiconductor excitation laser, 2400 lines/mm grating, thermoelectrically cooled 1024 pixels CCD, Stokes lines measurement mode: 100 cm-1 – 8000 cm-1, resolution: better than 1 cm-1. Con-focal Leica microscope with 3 objectives: x20, x50 and x100. Library of 8000 spectra.

Chemical composition

	X-ray photoelectron and ion scattering spectroscopy system, ESCALAB 250 (Thermo Fisher, 2013). Surface analysis employing: X-ray photoelectron spectroscopy (XPS), Ion scattering spectroscopy (ISS), Reflected electron energy loss spectroscopy (REELS), UV photoelectron spectroscopy (UPS) Monochromatic X-Ray source: Al anode, Ar ion source for ion scattering spectroscopy, reflected electron energy loss spectroscopy; no less than 0.45 eV resolution at FWHM of Ag 3d5/2; visualisation resolution: ≤ 3 µm; double charge neutralization; UV photoelectron spectroscopy system; temperature of the sample: 77 K–1000 K; sample transfer under vacuum, vacuum: ≤ 5∙10^–10 Torr.
	X-ray energy dispersion spectrometer Bruker XFlash 4030 (Germany, 2008) Spectrometer enables to quantitatively and qualitatively evaluate the composition of a sample by detecting chemical elements from B to Am in a selected spot (1 µm³ volume) or mapping the distribution of elements in an area. Modern 30 cm² temperature controlled (Peltier element) X-ray silicon shift spectrometer detector ensures 133 eV (at Mn Kα line) energy resolution with a very high X-ray photon detection speed (100,000 impulses per second).

Electrical, mechanical and thermal characteristics of devices, junctions and materials

	Picoammeter KEITHLEY 6487 Measurements of current-voltage characteristics, investigation of electrical characteristics of electronic, microelectronic and optoelectronic devices. Voltage: ± 500 V, current: 100 fA–20 mA.
	Surface Roughness Tester TR200 For measurements of surface roughness. Measuring ranges: 1. Ra: 0.03 μm ~6.3 μm/1 μ ~250 μ. 2. Rz: 0.2 μm ~50.0 μm/8 μ ~999 μ. 3. Ry/R max: 0.2 μm ~25 μm/8 μ ~999 μ. Resolution: up to 0.01 μm/1 μ. Measurement length: 0.8 mm/0.30”; ANSI 2RC filter.
	Dynamic microhardness measuring system with the base HM 2000S Investigation of micromechanical properties of thin films and coatings. Available load during the measurement: 0.1–2000 mN.
	Impedance analyser ALPHA-AK and its accessories; high temperature vertical furnace TF/IC-1000, 10427 (NorECs) For investigation of electrical properties of dielectric materials, thin films, for testing of components of solid oxide fuel cells in various temperatures. Frequency range: 3 µHz–3 MHz; 2-3 electrodes system; phase: 0.001°. Diameter of sample: 16 mm. Two “in-plane” and “through-plane” measurement configurations. The maximum heating temperature: up to 1200 °C (accuracy 0.1 °C).
	Collimated solar simulator SF150B (Sciencetech Inc. (SCI), Canada) It is a light source simulating Solar spectrum for photovoltaic measurements of samples. Illumination power: 1 Sun AM1.5G, class A. Deviation of illumination uniformity in beam: < 2 %. Diameter of the beam: 25 mm.
	Wetting angle tester Kruss, drop shape analysis system DSA25 (Germany, 2014) Measuring range: 1–180º, surface tension: 0.01–1000 mN/m, accuracy: 0.1º; 0.01 nM/m. Size of the sample: 320 × ∞ × 165 mm (length × width × height).
	Salt spray corrosion test chamber 60A Salt (fog) spray corrosion test chamber can be used for all kinds of material surface treatment, including coating, electroplating, organic and inorganic coating, anodizing, rust proof oil and preservative treatment test of its corrosion resistance, so as to establish the quality of the products. Test chamber capacity 108 L, Max volume of salt solution 15 L, test chamber size 107 × 60 × 118 cm, spray quantity 1.0~2.0ml / 80cm² / h. Equipment used for probing corrosion resistance properties of various materials.
	Four-point probe measurement system Voltage range 100 μV to 10 V, current range 1 μA to 200 mA, sheet resistance range 100 mΩ/□ to 10 MΩ/□, probe spacing 1,27 mm, max. sample dimensions 60 × 60 mm, max. sample thickness 10 mm, software Ossila Sheet Resistance Lite. Equipment used for measurement of sheet resistance and electrical conductivity.
	Induction heater for metal melting A523 Max. temperature 1400 ºC, graphite crucible dimensions (D_inner × H): 3.5 × 8 cm. Equipment used for metal melting.
	Vacuum drying oven SalvisLab Vacucenter VC50 Internal volume 50 L, max. load per oven 20 kg, temperature range ≥ 5 – 200 ⁰C, heating up to 150 ⁰C – 106 min, vacuum (absolute) < 6 × 10^-1 mbar. Equipment used for sample drying or storing at specific conditions.
	Rotary evaporator RE100-Pro Rotary evaporators are mainly used in pharmaceutical, chemical and biopharmaceutical industries for efficient and gentle removal of solvents from samples by evaporation, and solvent recovery. Its advantages come from the fact that rotation of the flask artificially increases the surface area of the solvent and effectively suppresses bumping while decreased pressure facilitates rapid solvent removal at low temperatures. Evaporator has automated jacks and advanced temperature control features. Speed range from 20 to 280rpm, and interval operation in clockwise and anticlockwise directions for drying process. 5L heating bath with wide temperature range from room temp. to 180°C. Digital display of both rotation speed and heating temperature allows for optimal control of all distillation processes. Patented condenser (cooling surface 1500cm²) with excellent cooling effect. Equipment used for removal of solvents from samples by evaporation, and solvent recovery.
	Infrared thermometer UT302D+ Temperature range 32 – 1100 °C, accuracy 1.5 %, repeatability 0.7 °C, D:S ratio 20:1, response time 250 ms, adjustable emissivity 0.1~1.0, spectral response 8 – 14 μm, laser power < 1 mW. Equipment used for temperature measurement.
	Digital hardness tester Shore D Durometer Measurement range 0 – 100 HD, resolution 0.5 HD, measurement accuracy ± 2 HD, indentation depth 0 – 2.5 mm, max. force 5 kg, indenter type D (sharp cone point, 30º). Equipment used for determination of shore hardness of the material. Ideal for use with hard rubber, hard resin, acrylic, glass, thermoplastic, etc.
	Coating thickness tester DT-156 Two measurement types: magnetic induction and Eddy current principle, measuring range 0 – 1250 μm, accuracy ± 3 % + 1 μm, resolution 0.1 μm. Equipment used for determination of coating or free-standing film thickness.

Microscopy

	Scanning probe microscopy system NanoWizard®3 NanoScience with supplements (JPK instruments AG, Germany) Measurement of surface topography and mechanical, electrical and magnetic properties in air and liquids. Suitable for characterisation of solids, polymers, biological samples and molecules. Also suitable for nanomanipulation and nanolithography. Working modes: contact, tapping, non-contact; microscopy of lateral force; record of phasic image; force modulation distribution (force mapping); quantitative representation: surface image based on force curves; magnetic force microscopy; force-distance spectroscopy; force-distance volume imaging mode; nanolithograhy and nanomanipulation; conduction microscopy with I/V curves registration; Kelvin probe force microscopy; capacitive microscopy. Scanning field: 100 × 100 µm; height up to 15 µm. Samples up to 100 mm in diameter and 50 mm in height.
	Scanning electron microscope FEI Quanta 200 FEG (FEI, USA, 2007) with energy dispersive X-ray spectrometer Bruker XFlash 4030. It is one of the principal technology tools used for imaging of nanostructures, nanodevices and surface. A contemporary field emission electron source permits working in controlled pressure water vapour atmosphere, thus this microscope is capable in investigating electrically nonconducting objects with high 1.2 nm resolution (resolution – minimal recorded dimension). Resolution in high vacuum is up to 1.2 nm (30 kV, SE), up to 2.5 nm (30 kV, BSE), 3 nm (1 kV, SE). Three vacuum working modes: high vacuum (< 6e-4 Pa), low vacuum (10–130 Pa), even lower vacuum (10–4000 Pa). It is possible to investigate conductive and nonconductive samples.
	Optical microscope with fluorescent addition OPTIKA (Bruker, Germany, 2011). Investigation of surface of various materials and micrometric measurements, fluorescence analysis. Wide-field eyepiece with micrometre scale, digital camera, fluorescence addition. Magnification: x1500. Samples up to 100 mm in diameter and 50 mm in height.
	Optical analyser Nikon S It is used for automatic size investigation of optically transparent structures (measurement uncertainty: 0.1+L/500 µm, where L – size of measured structure). Magnification: 1200. 800 times magnifying analyser-comparator Nikon (model N2) is used for investigation of structure size in transmittance and reflection modes. This analyser-comparator is very useful in measurement of plane topological step error. Analyser’s applications: control of photo mask, step error, control of semiconductor chips.

Optical properties

	Spectroscopic ellipsometer GES-5 (Semilab, Hungary, 2013 ) Device can be used for thin, isotropic and anisotropic, transparent and opaque layers on isotropic and anisotropic, transparent and opaque substrates optical constants (k(λ), n(λ)) and thickness measurements; evaluation of periodic structure linear dimensions (scatterometry); measurements of absorption kinetics in solutions. Spectroscopic ellipsometer covers UV-VIS-NIR spectrum. Measurement angles: 12–90° with the resolution of 0.01°, ability to measure using a focused beam (70 µm × 150 µm). High resolution detector: UV-VIS (190–900 nm) with the resolution of 0.5 nm, high speed UV-VIS detector (190–900 nm): 1024 wavelengths, high resolution NIR detector: 800–2000 nm with the resolution of 3 nm. Automated sample translation stage with digital imaging.
	Laser ellipsometer Gaertner L-115is used for measurements of thickness and refractive index of thin dielectric and semiconducting films. Laser ellipsometry is based on the analysis of parameters of polarisation of monochromatic polarised light beam reflected from the sample. Length of the light wave used is 632.8 nm. Thickness of films possible for analysis: 0.001–1 µm. Uncertainty of thickness measurements is ± (0.5–1) nm. Accuracy of the refractive index measurements: ± 0.01. Application areas: measurements of refractive index and thickness of the dielectric and semiconducting thin films, semitransparent thin metal films (< 50 nm), polymeric thin films (e.g. photo resist).
	Fiber-optic spectrometer CMA 012 Spectral range 360 – 940 nm, resolution < 1.5 nm FWHM, pixel resolution < 0.5 nm, light sources – halogen and UV LED (405 nm), software Coach 7. Equipment used for transmittance, absorbance and luminescence measurements in UV-VIS spectral range. Liquids can be analyzed in the standard cuvette, hard transparent samples

Technological equipment

Electron beam lithography, electron microscopy and surface analysis system e-LiNE plus (Raith, Germany, 2013)
System is used for nanolithography, nanostructuring and materials surface and composition analysis. Electron beam energy is changing in range 20 V–30 kV; 1 nm positioning accuracy in 100 × 100 mm field; diameter of round sample: up to 100 mm (4“), size of rectangular sample: up to 102 × 102 mm; magnification of scanning electron microscope with “in-lens” and Everhart-Thornley type detectors up to x1,000,000; energy resolution of energy dispersive spectrometer Bruker QUANTAX 200 with 5th generation Si detector: < 129 eV, allows to detect elements from Be (Z = 4) to Am (95).

Alignment and exposure system OAI Model 204 (SPS, Holand, 2014)
Precision alignment with photomasks, exposure of thin photoresist layers by ultraviolet rays. Suitable for round substrates with diameters of 50, 76, 102 mm and for non-standard samples which are at least 5 × 5 mm2 in size, substrate thickness: up to 1 mm, thickness of photomask: up to 4.8 mm. The distance between the substrate and photomask is adjustable up to 50 μm. Ranges of ultraviolet light wavelengths: UV400: 350–450 nm; UV300: 280–350 nm; UV250: 240–260 nm (deep UV radiation). UV nanoimprint lithography supplement, supplement of double-sided alignment using infrared light. Power of exposure source: 500 W. Deviation of illumination uniformity does not exceed 3 %. Resolution: no less than 0.5 µm.

Fabrication / modification of layers

	Vacuum evaporation equipment CUBIVAPT is used for fabrication of metal and dielectric films. It is oriented to production of optical interference filters and Fabry–Perot optical filters. Optical system with scanning monochromator enables control of the optical thickness of formed dialectical films. At the same time, thickness is measured using quartz thickness meter. Parameters of the equipment: Two 15 kW power electron guns; Two 4 kW power resistive evaporators; Substrate temperature: 20–400 ^oC; Vacuum in a chamber: 10^-3 Pa;
	Vacuum evaporation equipment A7000E is used for fabrication of metallic and dielectric films. The thickness of formed samples is controlled by microprocessor and quartz thickness meter. Parameters of the equipment: Vacuum in a chamber 10-4–10-5 Pa; Two 6 kW power electron guns with four rotating position crucibles. Substrates temperature: 20–400 ^oC.
	Epitaxial GaAs layers growth system KRATOS Used for growing Epitaxial GaAs layers, the control of grown films. 8 heated chambers are dedicated for the growth of epitaxial GaAs layers, 8 shutters are controlled by computer. Samples are transported in vacuum, no less than 1*10^-10 Torr.
	Langmuir-Blodgett bath Equipment for obtaining (Π-A) isotherms and fabrication of mono- and polymolecular organic structures on solid surfaces using Langmuir-Blodgett (LB) method. The equipment consists of LB bath, electronic control unit and personal computer with Windows 98/2000/XP operating system to launch the control programme. Parameters of the bath: Free surface area: 400 cm2; Working surface: 318 cm2; Liquid volume: 1000–1050 cm3; Surface pressure meter: Wilhelmi plate (error 0.1 mN/m). Dimensions of well: depth – 75 mm, diameter – 60 mm.
	Galvanoplastic equipment Ni film fabrication on plastic surface. Volume of electrolysis bath is 65 litres. Electrolyte – nickel plating vitriolic with special additives (brightener, coating hardener). The required temperature is kept constant by electronically controlled heating element. Electrolyte is mixed using mechanical stirrer and by pumping it through textile filter. Anode – titanium cage filled with Ni+0.1 % NiS pellets, dissolving during electrolysis. Electric current is supplied from alternating current intensity electricity rectifier (Imax = 0 – 30 A). Quantity of electricity (A/h) is measured by especial meter. Surface area of Ni layer is up to 500 cm².
	Spin coater for thin films KW-4A with additional modules Spin coater, hotplate and UV lamp for thin film fabrication. Spin coater can be set for two different duration intervals (2–18 s and 3–60 s) and rotation speed (500–2500 RPM; 1000–8000 RPM) processes. Hotplate temperature: 30–300 °C, sample size: up to 6“, temperature resolution: 0.1 °C. UV module has 4 6 W lamps, wavelengths 246 nm and 365 nm, sample can be rotated (4“, 6 RPM).
	Ion-beam diamond-like carbon (DLC) deposition device URM 3.279.053. The device is designed for ion-beam deposition process of DLC from hydrocarbon and dopant materials. Main parameters of the device: Base pressure in chamber: 4·10-4 Pa; Pressure during DLC synthesis: (1-2)·10^-2 Pa; Accelerating potential of ion-beam source: max 2 kV; Ion beam current density: 0.05–0.25 mA/cm2; Current of solenoid: 6 A. Gases: both inert and reactive gases can be used.
	Microwave plasma activated chemical vapour deposition system CYRANNUS I-6” (IPLAS Innovative Plasma Systems GmbH). Crystalline diamond, carbon nanotubes, graphene fabrication. Diameter of plasma source: 6“, power of plasma source: 6 kW, frequency of plasma: 2.45 GHz, diameter for uniform deposition: 5 cm.
	Device for plasma enhanced chemical vapour deposition process PK-2430PD The device is designed for plasma enhanced chemical vapour deposition of dielectric SiN films from monosilane, ammonia gas and for etching of SiO2, Si3N4 films. Main parameters of the device: Base vacuum in chamber: 1.3 Pa; Technological pressure in chamber:13.3– 1330 Pa; RF generator power: 0–3 kW; Frequency: 13.56 MHz; Temperature of the substrate: 20–350 ^oC. Gases: SiH4, NH3, N2, CF4, O2, CHF3, Ar.
	Inductively coupled plasma reactive ion etching system Plasma-Therm Apex SLR ICP Deep reactive ion etching for microfabrication processes and formation of nanostructures. Uniformly etched area diameter: 15 cm.
	Device for ion-beam etching process USI-IONIC The device is designed for ion-beam etching of semiconductors and metal microstructures. Main parameters of the device: Base vacuum in chamber: 5∙10^-4 Pa; Technological pressure in chamber: 7∙10^-2 –4∙10^-1 Pa; Ion-beam energy: 0–500 keV; Ion-beam current density: 0.01–0.30 mA/cm²; Gases: Ar, N2, O2, He, C3F₈.
	Capillary force assisted particle assembly setup Deposition of ordered arrays of microparticles from their colloidal suspensions on a template. Process can be monitored using an optical microscope with a dark field interference contrast function.
	Two component doser Dopag Micro Mix E Able to mix PDMS elastomer and its curing agent at a ratio of 1:10. Minimum volume: 1 ml. Single use passive mixers are used.
	Orbital mixer Thinky Centrifuge Mixer ARE Able to mix up to 250 ml viscous fluids (dedicated for PDMS).
	3D printer W10 Max. 3D model forming size 98 × 55 × 140 mm, layer thickness 0.025 to 0.1 mm, print speed 30 mm/h, XY-axis positioning accuracy 115 μm, Z-axis positioning accuracy 0.625 μm, laser wavelenght 405 nm, supporting material – LCD resin, software Alfawise W10 Slice, file format: STL. Equipment used for 3D model printing, prototyping.
	Centrifuge LACE16 Max. speed 10000 rpm, max. volume 6 × 100 ml, max. RCF 19040 g, timer 0 – 99 min, speed accuracy ± 20 rpm. Equipment used for phase separatio

Laser technologies

	UV laser Holographic lithography, micromachining. 375 nm wavelength and 15 mW power laser.
	Lloyd’s mirror holographic lithography system (Standa, Lithuania, 2013) Holographic lithography, micromachining. Structures with period of 188–323 nm can be fabricated (interference angle: 80–35º, respectively).
	Laser manufacturing and kinetic spectroscopy system FemtoLab (R&D Altechna, Lithuania, 2013) Micro-/nanofabrication of materials using focused laser beam (sample or beam scanning, ablation by the interference field) and absorption kinetics measurement. Yb: KGW laser wavelength: 1030 nm, power: 4 W, pulse duration: 290 fs, energy: > 0.2 mJ. Microfabrication in the 160 mm × 160 mm area can be carried out with 300 nm positioning accuracy. Table movement speed: 300 mm/s, sample weight: up to 3 kg. Excitation using nonlinear parametric amplifier (315 – 2600 nm), spectral width of the probe beam: 480 – 1100 nm, time resolution: 16.67 fs, the maximum pulse delay: 1.8 ns, the detection limit of the absorption changes: 0.5 mOD. The minimum dimensions of laser damage: 1–16 µm depending on the selected mode
	Dot-matrix hologram master fabrication equipment „HENGLEI Hologram“ (2009) Fabrication of dot-matrix hologram master in a photoresist layer. Wavelength of laser light: 405 nm. Dimensions of fabricated dot-matrix: 200 × 200 mm2. Resolution of choice: 317; 600, 1200 dpi.

Fabrication of optically variable security labels

	Microstamps fabrication equipment MSM-1 The equipment is suitable for printing of holograms and diffractive optical elements in multi-layered polymer films. Additional functions: fabrication of adhesive layers on polymer film or siliconized paper; cutting.
	Equipment for holograms printing Fabrication of optical document and intellectual property security mediums with microdiffractive elements. Printing of optical security labels in multilayered polymer film (belt). Fabrication temperature: 50 ^oC–180 ^oC, width of belt: 160 mm, length: 1000 m, thickness: 16–100 µm, printing speed: 0–10 m/min.
	Equipment for holograms duplication Duplication of microrelief on plastic surface. Fabrication of submicrometric (nanometric) dimensions relief on plastic surface. Fabrication temperature: 20 ^oC–200 ^oC, pressure: 0–900 KPa, area 200×200 mm².
	Laser marking system RY-F30 Laser power 30 W, working area 110 × 110 mm, laser wavelength 10.64 μm, response time 0.5 ms, frequency of pulse 20-100 KHz, marking depth ≤ 0.4 mm, marking speed up to 7000 mm/s, repeatability accuracy ± 0.001mm, beam diameter < 30 μm, rotary annex for marking cylindrical parts, control software EZCAD, graphic format supported BMP, JPG, GIF, TGA, DXF, PLT, PNG, TIF, DST. Equipment used for laser marking of various materials.