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Dynamic electronic surface with flowing signal-like patterns, representing real-time signal processing and proof-of-concept neuromorphic device operation.

Proof-of-Concept Demonstration of Neuromorphic Devices

Functionalized ZnO tetrapod networks (ZnO TNs) will be integrated into proof-of-concept neuromorphic in-sensor preprocessors capable of performing adaptive time-domain signal processing directly within the sensing substrate. Through systematic electrical characterization and iterative optimization, the developed prototypes will demonstrate stable, low-energy, and real-time neuromorphic operation while assessing their scalability toward practical edge-computing applications and TRL-3 validation.

About

Functionalized ZnO TNs will be integrated into a well-defined in-sensor preprocessor that performs time-domain feature extraction and on-device adaptation within the sensing substrate, showing network-level neuromorphic behaviour (nonlinear response, dynamic charge transport, fading-memory effects) rather than isolated synaptic events. The prototype will process spatiotemporal signals for tasks such as anomaly detection, signal transformation, and trend estimation, thereby reducing downstream classifier load and enabling real-time operation at the edge.
To ensure reproducibility and stability, rigorous electrical characterization will be conducted to quantify latency (end-to-end detection delay), energy per update, accuracy parity with a software baseline (e.g., AUROC), dynamic range, and 24-h drift under repeated operation. The tunability window will be mapped via controlled UV and chemical perturbation sweeps where relevant. The potential for scalable fabrication will be explored through additive, low-temperature processes (e.g., spray coating) to deposit functionalized TNs on diverse substrates, including flexible and lightweight materials—consistent with the project’s green electronics principles. The prototype will undergo iterative test–optimize cycles to verify stable operation under defined conditions at TRL 3. Collaboration with industrial partners will inform enclosure, interfacing, and line-side integration, providing early evidence of future scalability and structured transition pathways for ZnO TN–based neuromorphic computing.

Objectives

Objective 1

Develop scalable deposition and integration strategies for ZnO TN-based neuromorphic devices, compatible with sustainable fabrication

Objective 2

Design and fabricate functional in-sensor preprocessor prototypes incorporating ZnO TNs

Objective 3

Evaluate and optimize prototype performance (latency, accuracy parity, power, stability) through electrical characterization and application-oriented tests

Tasks of the Work Package

Deposition and integration of ZnO TN-based devices

Lead: KTU
Contributors: NAN, INP, UTW

KTU will develop scalable deposition (ultrasonic spray, slot-die) to integrate ZnO TNs into device stacks. NAN will contribute capillary assisted self-assembly to refine network arrangement. INP will apply plasma-assisted treatments to improve adhesion/interconnectivity. UTW will check process compatibility with prototype layouts and assembly.

Fabrication of neuromorphic proof-of-concept device
Lead: UTW
Contributors: KTU, IT, HFA

UTW will lead prototype builds using ZnO TNs supplied by KTU; IT will support biasing/readout layouts and interconnects; HFA will optimize assembly and PCB integration for bench evaluation and enclosure trials.

Performance evaluation of neuromorphic devices
Lead: IT
Contributors: UTW, UAvr, KTU

IT will run electrical characterization focused on end-to-end latency, accuracy parity vs. software, average active power, and 24-h drift. UTW will execute application tests (anomaly detection/classification) using shared stimuli/analysis; UAvr will provide complementary optical/structural checks. KTU will correlate performance with material/process parameters.

Demonstration and application testing
Lead: UTW
Contributors: KTU, IT, HFA, NAN

UTW will coordinate demonstrations of real-time in-sensor preprocessing; KTU provides functionalized ZnO TNs and supports tuning; IT assists electronic evaluation; HFA and NAN facilitate industrially relevant test scenarios and integration feedback for future pilots.

Lead Beneficiary

University of Twente logo with uppercase text in black and white typographic design, link to partner information.

Contacts TetraNET

Institute of Materials Science

K. Baršausko St. 59,
LT-51423 Kaunas, Lithuania
e.mail: tetranet@ktu.lt